Direct low-temperature nanographene CVD synthesis over a dielectric insulator
M. H. Rümmeli, A. Bachmatiuk, A. Scott, F. Börrnert, J. H. Warner, V. Hoffman, J.-H. Lin, G. Cuniberti, and B. Büchner
ACS Nano 4, 4206 (2010)
Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.