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266. 


Bandgap engineering of CdxZn1-xTe nanowires



K. Davami, J. Pohl, M. Shaygan, N. Kheirabi, H. Faryabi, G. Cuniberti, J.-S. Lee, M. Meyyappan

Nanoscale 5, 932 (2013)

Bandgap engineering of single-crystalline alloy CdxZn1-xTe nanowires is achieved successfully through control of growth temperature and a two zone source system in a vapor-liquid-solid process. Extensive characterization using electron microscopy, Raman spectroscopy and photoluminescence shows highly crystalline alloy nanowires with precise tuning of the bandgap. It is well known that bulk CdxZn1-xTe is popular for construction of radiation detectors and availability of a nanowire form of this material would help to improve detection sensitivity and miniaturization. This is a step forward towards the accomplishment of tunable and predetermined bandgap emissions for various applications.



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doi absolute link10.1039/C2NR33284A
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