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308. 


Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector



M. Shaygan, K. Davami, N. Kheirabi, Changi Ki Baek, G. Cuniberti, M. Meyyappan and Jeong-Soo Lee

Phys. Chem. Chem. Phys. 16, 22687 (2014)

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (2.5 - 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.



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doi absolute link10.1039/c4cp03322a
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