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444. 


In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs



D. Y. Jeon, T. Baldau, S. J. Park, S. Pregi, L. Baraban, G. Cuniberti, T. Mikolajick, and W. M. Weber

IEEE ESSDERC (2017)

In this paper the operation mechanism of ambipolar Si-nanowire (Si-NW) Schottky-barrier (SB) FETs is discussed in detail using temperature dependent current-voltage (I-V) contour maps. Thermionic and field emission mechanism limited the overall conduction behavior of ambipolar Si-NW SB-FETs with considerable SB-height. However, Si-channel dominant transports with phonon scattering mechanism occur even in the SB based device at a specific bias condition, where charge carrier injection is saturated with a very thinned SB. Temperature dependent transconductance (gm) behavior, TCAD simulation and extracted activation energy (Eae) maps also support the explained operation principle of ambipolar Si-NW SB-FETs.



doi absolute link10.1109/ESSDERC.2017.8066652
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