Electrostatic force microscopy measurement of carbon nanotube field-effect transistors (HL 1.9)
I. Ibrahim, N. Ranjan, J. Posseckardt, M. Mertig, and G. Cuniberti
DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM)
DPG Spring Meeting of the Section Condensed Matter (SKM)
2009.03.23; (BEY 81) Dresden, Germany
Multi-tube field-effect transistors (FETs) are assembled between two metallic electrodes using dielectrophoresis, in which a solution of dispersed single-walled carbon nanotubes (SWCNTs) is put between the electrodes, and an AC voltage with an amplitude of 5-8 V and a frequency of 300 kHz is applied [1,2]. After depositing the SWCNTs between the electrodes, the solution is blotted with a filter paper and the sample is dried with air. Room temperature I-V measurements are performed for such multi-tube devices which are found to have transistor-like behaviour in most cases. Further on, the devices are characterized with Atomic force microscopy (AFM) and electrostatic force microscopy (EFM). By applying a voltage to the AFM tip in lift mode , we are able to detect changes of the potential along the deposited SWCNT interconnects, and thus, to identify local defects in the transistor channels.
 S. Taeger, M. Mertig, Int. J. Mat. Res. 98, 742 (2007).
 N. Ranjan, M. Mertig, phys. stat. sol. (b) 245, 2311 (2008).
 T. P. Gotszalk, P. Grabiec, I. W. Rangelow, Materials Science 21, 333 (2003).
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Prof. Dr. Gianaurelio Cuniberti
Institute for Materials Science
visitors and courier address:
01062 Dresden, Germany