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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

» presentations   » 2011.03.17




Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications (MM 39.6)

D. Nozaki, J. Kunstmann, F. Zörgiebel, G. Cuniberti

DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) und der Sektion AMOP (SAMOP)
DPG Spring Meeting of the Condensed Matter Section (SKM) and the Atomic, Molecular, Plasma Physics and Quantum Optics Section (SAMOP)


2011.03.17; (IFW A) Dresden, Germany

We developed a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanism of the transport process. Our multiscale model combines two approaches on different lengthscales: (1) the finite element method to calculate the electrostatic potential across the Schottkycontact and (2) the Landauer approach combined with the method of non-equilibrium Green\u2019s functions to calculate the electron transmission through the device. Our model correctly reproduces typical I-V characteristics of FETs and we obtained current saturations and high on/off ratios that are in good agreement with the experiment.



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