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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

» presentations   » 2012.03.28

Chemical surface modifications for altering electrical characteristics of silicon nanowire Schottky-barrier FETs (HL 63.4)

S. Pregl, W. Weber, J. Opitz, G. Cuniberti

DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM)
DPG Spring Meeting of the Condensed Matter Section (SKM)

2012.03.28; (EW 015) Berlin, Germany

The interface of semiconductors to metals with a different work function introduces a Schottky barrier. For axially Ni-silicidized silicon nanowires a very sharp interface and thus a very defined and reproducible energetical barrier is created. We use NiSi2-Si-NiSi2 heterostructures as Schottky-barrier field effect transistors (SB-FETs) for sensor applications and nanoelectronic devices. Silicon nanowires can be grown as thin as 5nm with VLS (vapor liquid solid) technique in a CVD furnace. The high surface to volume ratio of such nanostructures makes their electronic properties very sensitive to surface adsorbates and covalently bound molecules. The effect of surface functionalization is investigated in respect of a potential use for biosensor applications and new ways to alter device characteristics of silicon nanowire FETs.

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