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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

» presentations   » 2014.03.09-13

Light-induced electrical switching of porphyrin-covered silicon nanowire FETs (invited talk).

Gianaurelio Cuniberti

SPIE Smart Structures/NDE 2014

2014.03.09-13 ; San Diego, USA

Nanowires represent excellent building blocks for future nanoelectronics, due to their efficient charge transport characteristics. Here we present light-induced switching behaviour of porphyrin-coated silicon nanowire field effect transistors (Si NW FETs) and demonstrate their capabilities for design of hybrid nanodevices consisting of organic complexes and inorganic nanowires. Switching of Si NW FETs highly reflects the electrical change of porphyrin molecules by light. To demonstrate significant factors of concentration-dependent switching of porphyrin-covered devices, electrical charging mechanism through molecules and nanowires has been understood, that allows the systematic integration of the hybrid devices.

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