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Materials 4.0: Deep Mechanics

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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

» presentations   » 2016.03.10

Molecular switches for dangling bond circuits

Thomas Lehmann, Dmitry A. Ryndyk, and Gianaurelio Cuniberti1

DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM)

2016.03.10; Regensburg, Germany

On the road to atomic-scale electronic circuits, dangling bond wires are promising candidates. Dangling bonds are formed by selectively removing hydrogen from a passivated silicon surface [1,2] and multiple dangling bonds in a row feature extended electronic states. Those quasi 1D surface structures can be used as atomic scale interconnects. In such circuits, molecules, which can controllably passivate or depassivate a dangling bond can provide logical inputs for constructing simple logic elements. In this talk, we present recent studies combining density-functional based approaches with Green function methods of a molecular switch for dangling bond wires on silicon.

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Prof. Dr. Gianaurelio Cuniberti
Ms Sylvi Katzarow
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