Skip to content.

TUD

search  |  internal  |  deutsch
Personal tools
TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology



Monday, 08 December 2003
(at 14:00 in room Phy 4.1.13)
Add to your Google Calendar


Oxide reliability - Notes of an industry host fellowship

Michael Langenbuch

Central RD
STMicroelectronics
  I-20041 Agrate Brianza, Italy  






The function of metal-oxide-semiconductor field effect transistors relies on a thermal oxide of silicon (SiO2) insulating the gate electrode from the conducting transistor channel. As integrated circuits are made smaller, all dimensions of the transistor are reduced and it is important to study the ability of a thin film of SiO2 to retain its insulating properties during the operation of the transistor. As transistors usually are working for more than 10 years, accelerated test at voltages higher than the operating voltage are used to estimate the reliability of the oxide. The presentation motivates the importance of reliability considerations, describes the mechanisms of oxide failure and gives an overview of the methodologies used in industry to extrapolate the lifetime of the oxide.



slides (pdf)

Invited by G. Cuniberti (MC seminar)

last modified: 2018.10.24 Mi
author: webadmin