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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

Friday, 12 March 2004
(at 10:15 in room H15)
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Carbon Nanotubes - A Successor to Silicon Technology?

Wolfgang Hoenlein

Corporate Research in Muenchen
Infineon Technologies AG

Carbon nanotubes (CNTs) are powerful candidates for both interconnects and field-effect transistors with better performances than silicon based devices. The CNTs can be selectively produced in microelectronics compatible processes using catalyst mediated CVD growth. One promising concept for the integration of CNT's into the existing silicon technology is the replacement of metal wires at places of critical current density. The recent results from CNT field-effect transistor devices will be reviewed and compared with state-of-the-art silicon devices. Further, ideal and non-ideal CNT transistors have been simulated and their properties compared with the expectations for the 2016 silicon transistor. Based on this, a concept for a 3-dimensional CNT based technology will be presented. We will also identify the key success factors of the silicon technology and assess the emerging CNT technology with respect to the mature silicon technology.

abstract (html)

Within the DPG Frühjahrstagung 2004 (German Physical Society, Spring Meeting 2004)

last modified: 2019.01.08 Di
author: webadmin

Prof. Dr. Gianaurelio Cuniberti
Ms Sylvi Katzarow
phone: +49 (0)351 463-31420
fax: +49 (0)351 463-31422
postal address:
Institute for Materials Science
TU Dresden
01062 Dresden, Germany
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