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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology



Wednesday, 14 November 2012
(at 13:00 in room 115, Hallwachsstr. 3)
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In Quest of a New Nanoelectronic Low Power Switch

Heike Riel


IBM Research GmbH, Z\FCrich Research Laboratory
  Switzerland  






The scaling of semiconductor technology (CMOS) has been the driving force for the success of information technology. However, as device dimensions continue to shrink into the nanometer length-scale regime, conventional semiconductor technology is approaching fundamental physical limits. For example, the increasing power dissipation on the chip level is one of the key challenges today. Rising leakage currents and the increasing difficulty to further reduce the supply voltage have impacted the passive and active power dissipation, limiting the overall performance. Therefore a key attribute of any new device that may be considered for replacing the conventional FET is reduced power dissipation. In that respect new strategies, including the use of III-V as well as novel materials and 1D-device concepts including innovative device architectures and device concepts need to be explored and assessed. They are crucial to extend the current capabilities and maintain momentum beyond the time frame of the silicon technology roadmap. This presentation will outline the challenges of current semiconductor roadmap and will evaluate in more detail the most prominent candidates for becoming the next nanoelectronic switch.

Brief Bio:

Heike Riel is the Manager of the Nanoscale Electronics Group at IBM Research Zurich and is responsible for projects in the area of semiconducting nanowires for various applications and molecular electronics. Her research focuses on new materials and novel device concepts for future nanoelectronics in particular steep slope devices for energy efficient computation. Heike Riel studied physics at the University of Erlangen-Nuremberg (Germany) and received a PhD from the University of Bayreuth (Germany) in 2003 for her work on the optimization of multilayer organic light-emitting devices. After an internship at the Hewlett-Packard Research Laboratory, Palo Alto, she joined the IBM Zurich Research Lab in 1998 as a PhD student, and became a Research Staff Member in 2003. Since 2008 she has been leading the Nanoscale Electronics Group. In 2011 Heike has graduated with an MBA from Henley Business school. Heike Riel made major contributions to the development of the (at that time) worlds largest ever (20'') full-color amorphous-silicon active-matrix display based on organic light-emitting diodes, which was presented in May 2003. For her outstanding scientific contributions Heike was elected by Technology Review, MIT's Magazine of Innovation, to the TR100, the annual list of the world's 100 Top Young Innovators in September 2003 and she received the 2005 Applied Physics Award of the Swiss Physical Society. In June 2012 Heike Riel received the award in the category "Technical or Scientific Innovation" which was awarded by the Swiss Association of Women in Engineering (SVIN) on the occasion of their 20th anniversary. Heike Riel is a member of the German Physical Society, the Swiss Physical Society, the Materials Research Society and a senior member of the IEEE.

Invited by G. Cuniberti

Within the CfAED Seminar Series

last modified: 2018.10.24 Mi
author: webadmin