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| Charge transport in nanowire-based Schottky-barrier field-effect transistors in the material system Ni2Si/Si is examined by multi-scale simulations. The field effect is described by calculations based on the finite element method and the resulting currents are calculated with a quantum mechanical transport model. The requirements for the accuracy of the input parameters are determined and predictions about optimum material and device parameters are made.
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Invited by V. Bezugly
Within the Transport Seminar
last modified: 2021.03.17 Wed
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Prof. Dr. Gianaurelio Cuniberti
secretariat:
postal address:
Institute for Materials Science
TU Dresden
01062 Dresden, Germany
visitors and courier address:
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