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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology

Friday, 18 January 2013
(at 13:00 in room 115, Hallwachsstr. 3)
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Multi scale simulations of charge transport in silicon nanowire-based transistors

Hagen Eckert

Chair Materials Science and Nanotechnology
TU Dresden

Charge transport in nanowire-based Schottky-barrier field-effect transistors in the material system Ni2Si/Si is examined by multi-scale simulations. The field effect is described by calculations based on the finite element method and the resulting currents are calculated with a quantum mechanical transport model. The requirements for the accuracy of the input parameters are determined and predictions about optimum material and device parameters are made.

Announcement (pdf)

Invited by V. Bezugly

Within the Transport Seminar

last modified: 2021.10.02 Sat
author: webadmin