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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology



Wednesday, 10 March 2004
(at 13:30 in room Phy 4.1.13)
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The full counting statistics in single electron transistors

Alessandro Braggio

Institut für Theoretische Physik III
Ruhr-Universität Bochum
  Germany  






The Full Counting Statistics(FCS) is becoming a new paradigm, in the electronic transport contest, to extract new informations about the physics of a certain system [1,2,3,4,5]. The seminar is a simple introduction to the basilar concepts used in these active research field. A diagrammatic approach to calculate the FCS of point contact, in the tunneling regime, is presented, reobtaining the results reported many years ago by Levitov [1,6]. The novelty of this approach is the possibility to generalize it, to study the FCS in the single electron tunneling set up beyond the sequential tunneling approximation [7,8].
[1] L. S. Levitov, G. B. Lesovik JETP Lett. 58, 461 (1993)
[2] L. S. Levitov, G. B. Lesovik, H. W. Lee, J. of Math. Phys. 37, 4845 (1996)
[3] Yu. V. Nazarov, Special issue of Comments Ann. Phys. (Leipzig) 8, SI-193 (1999)
[4] W. Belzig, Yu. V. Nazarov Phys. Rev. Lett. 87, 067006 (2001)
[5] Yu. V. Nazarov, M. Kindermann, cond-mat/0107133
[6] L.S. Levitov, M. Reznikov, cond-mat/0111057
[7] D. A. Bagrets, Yu. V. Nazarov, Phys. Rev. B 67, 085316 (2003)
[8] M.J. M. de Jong, Phys. Rev. B 54, 8144 (1996)


work done in collaboration with: Jürgen Küenig



slides (pdf)

Invited by G. Cuniberti (MC seminar)

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