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TU Dresden » Faculty of Mechanical Science and Engineering » Institute for Materials Science » Chair of Materials Science and Nanotechnology



Thursday, 07 July 2016
(at 13:00 in room 115, Hallwachsstr. 3)
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Polarization in InGaN Quantum Wells

Ulrich Schwarz


TU Chemnitz, Institute of Physics, Chair of Experimental Sensor Science
   






Light emitting diodes (LEDs) ranging from high-power, high efficiency ones for solid-state lighting to tiny micro-LEDs used for stimulation of nerve cells in the field of optogenetics as well as laser diodes in the violet-blue-green part of the light spectrum have one thing in common: they are based on spontaneous electroluminescence and stimulated light emission in quantum wells made from the semiconductor Indium-Gallium-Nitride (InGaN). Due to their crystal symmetry, all group-III-nitrides (AlN, InN, GaN) and their compounds are ferroelectric, piezoelectric, and optical birefringent. I will discuss these effects and their impact on the physical properties of the above mentioned devices.

Announcement (pdf)


Brief Bio:

Ulrich T. Schwarz received the Ph.D. degree in physical science and the Habilitation

Invited by G. Cuniberti

Within the nanoSeminar

last modified: 2018.10.24 Mi
author: webadmin