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311. 


Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector



M. Shaygan, K. Davami, N. Kheirabi, C. K. Baek, G. Cuniberti, M. Meyyappan, and J. S. Lee

Phys. Chem. Chem. Phys. 16, 22687 (2014)

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (2.5 - 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.



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doi absolute link10.1039/c4cp03322a
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