Zhongquan studied Materials Science at the Central South University from 2005 to 2012. He got his Master degree on the "The effect of trace Ge on Al-Cu-(Mg) alloy by TEM and APT". After graduation, he worked as a visiting scientist at Fraunhofer institute IZFP-D, studied in dielectric breakdown at 32nm CMOS technology by in-situ TEM technique. In October 2012, he started his Ph.D. thesis at our chair (Prof. Cuniberti) and Fraunhofer institute IZFP-D (Prof. Zschech). He will work on band gap measurment on strained Graphene by in-situ TEM technique.