Microfluidic alignment and trapping of 1D nanostructures - a simple fabrication route for single-nanowire field effect transistors
RSC Advances 5, 94702 (2015).
A. Gang, N. Haustein, L. Baraban, W. Weber, T. Mikolajick, J. Thiele, and G. Cuniberti.
https://doi.org/10.1039/C5RA20414C

We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.

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Microfluidic alignment and trapping of 1D nanostructures - a simple fabrication route for single-nanowire field effect transistors
RSC Advances 5, 94702 (2015).
A. Gang, N. Haustein, L. Baraban, W. Weber, T. Mikolajick, J. Thiele, and G. Cuniberti.
https://doi.org/10.1039/C5RA20414C

We present a simple method to microfluidically align and trap 1D nanostructures from suspension at well-defined positions on a receiver substrate for the fabrication of single-nanowire field effect transistors (NW FETs). Our approach allows for subsequent contacting of deposited NWs via standard UV-lithography. We demonstrate that silicon as well as copper(II) oxide NWs can be processed, and that up to 13 out of 32 designated trapping sites are occupied with single-NW FETs.

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Involved Scientists