Stacking different two-dimensional materials to fabricate a high mobility transistor


DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) | event contribution
March 10, 2016 | Regensburg, Germany

In recent years, several two-dimensional (2D) semiconducting materials like graphene, MoS2, WSe2, silicene, germanene etc. have been produced and studied. Their semiconducting properties allow the development of 2D structures, whose electronic properties can be tuned. By fabricating gate electrodes on the 2D materials, field effect transistors have been demonstrated. Further exciting possibilities open up when these materials are stacked together to achieve the desired application. The first series of experiments are carried out with graphene nanoribbons (GNRs) deposited on functionalized Si/SiO2 substrate. Prior to the deposition, the Si/SiO2 substrate is patterned with Ni alignment marks, to locate and characterize GNRs by AFM and Raman spectroscopy. Au electrodes are then fabricated on selected GNRs using electron beam lithography to measure the electrical transport properties. In future, the aim will be to fabricate a heterostructure by stacking different 2D materials, whose different properties can complement each other to fabricate a high mobility transistor


Authors

Stacking different two-dimensional materials to fabricate a high mobility transistor


DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM) | event contribution
March 10, 2016 | Regensburg, Germany

In recent years, several two-dimensional (2D) semiconducting materials like graphene, MoS2, WSe2, silicene, germanene etc. have been produced and studied. Their semiconducting properties allow the development of 2D structures, whose electronic properties can be tuned. By fabricating gate electrodes on the 2D materials, field effect transistors have been demonstrated. Further exciting possibilities open up when these materials are stacked together to achieve the desired application. The first series of experiments are carried out with graphene nanoribbons (GNRs) deposited on functionalized Si/SiO2 substrate. Prior to the deposition, the Si/SiO2 substrate is patterned with Ni alignment marks, to locate and characterize GNRs by AFM and Raman spectroscopy. Au electrodes are then fabricated on selected GNRs using electron beam lithography to measure the electrical transport properties. In future, the aim will be to fabricate a heterostructure by stacking different 2D materials, whose different properties can complement each other to fabricate a high mobility transistor


Authors