Nanowires represent excellent building blocks for future nanoelectronics, due to their efficient charge transport characteristics. Here we present light-induced switching behaviour of porphyrin-coated silicon nanowire field effect transistors (Si NW FETs) and demonstrate their capabilities for design of hybrid nanodevices consisting of organic complexes and inorganic nanowires. Switching of Si NW FETs highly reflects the electrical change of porphyrin molecules by light. To demonstrate significant factors of concentration-dependent switching of porphyrin-covered devices, electrical charging mechanism through molecules and nanowires has been understood, that allows the systematic integration of the hybrid devices.
Nanowires represent excellent building blocks for future nanoelectronics, due to their efficient charge transport characteristics. Here we present light-induced switching behaviour of porphyrin-coated silicon nanowire field effect transistors (Si NW FETs) and demonstrate their capabilities for design of hybrid nanodevices consisting of organic complexes and inorganic nanowires. Switching of Si NW FETs highly reflects the electrical change of porphyrin molecules by light. To demonstrate significant factors of concentration-dependent switching of porphyrin-covered devices, electrical charging mechanism through molecules and nanowires has been understood, that allows the systematic integration of the hybrid devices.