Metallic nanowire growth from solution using dielectrophoresis (MM 46.3)


DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM)<br>DPG Spring Meeting of the Condensed Matter Section (SKM) | event contribution
March 29, 2012 | (H 1029) Berlin, Germany

Growth of metal nanowires from solution is a promising "bottom-up" method which can represent an efficient alternative to classical lithography. Here we present a dielectrophoretic growth of nanowires on an amorphous glass substrate in a solution containing Pt-complexes. Aiming at a controlled growth of straight and as thin as possible wires, the growth process is investigated both in theory and experiment. The metallic nanowire tip is modeled as a sphere electrode. The model includes the dielectrophoretic force on uncharged metal complexes as well as their diffusion in the solution. Experimental data suggest that the deposition process traverses from reaction-limited to diffusion-limited when going from low to high temperatures. Possible reasons for the rate limitation are discussed. Potassium ions in the solution are found to have a great influence on the deposition rate. Finally, we compare the experimentally measured growth velocities with those theoretically calculated.


Authors

Metallic nanowire growth from solution using dielectrophoresis (MM 46.3)


DPG Frühjahrstagung der Sektion Kondensierte Materie (SKM)<br>DPG Spring Meeting of the Condensed Matter Section (SKM) | event contribution
March 29, 2012 | (H 1029) Berlin, Germany

Growth of metal nanowires from solution is a promising "bottom-up" method which can represent an efficient alternative to classical lithography. Here we present a dielectrophoretic growth of nanowires on an amorphous glass substrate in a solution containing Pt-complexes. Aiming at a controlled growth of straight and as thin as possible wires, the growth process is investigated both in theory and experiment. The metallic nanowire tip is modeled as a sphere electrode. The model includes the dielectrophoretic force on uncharged metal complexes as well as their diffusion in the solution. Experimental data suggest that the deposition process traverses from reaction-limited to diffusion-limited when going from low to high temperatures. Possible reasons for the rate limitation are discussed. Potassium ions in the solution are found to have a great influence on the deposition rate. Finally, we compare the experimentally measured growth velocities with those theoretically calculated.


Authors