We developed a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanism of the transport process. Our multiscale model combines two approaches on different lengthscales: (1) the finite element method to calculate the electrostatic potential across the Schottkycontact and (2) the Landauer approach combined with the method of non-equilibrium Green\u2019s functions to calculate the electron transmission through the device. Our model correctly reproduces typical I-V characteristics of FETs and we obtained current saturations and high on/off ratios that are in good agreement with the experiment.
We developed a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanism of the transport process. Our multiscale model combines two approaches on different lengthscales: (1) the finite element method to calculate the electrostatic potential across the Schottkycontact and (2) the Landauer approach combined with the method of non-equilibrium Green\u2019s functions to calculate the electron transmission through the device. Our model correctly reproduces typical I-V characteristics of FETs and we obtained current saturations and high on/off ratios that are in good agreement with the experiment.
