Single-walled carbon nanotubes (SWCNTs) are considered a promising material for future nanoelectronics because of their excellent electronic and physical properties. Their electronic properties strongly depend on their diameter and chiral angle. SWCNTs are divided into metallic and semiconductor SWCNTs. High yield semiconductor horizontally well-aligned SWCNT are essential for molecular electronics applications, in which one needs to fabricate parallel active devices, such as diodes and transistors. In this study, well-defined protocols have been developed for growing horizontally well-aligned carbon nanotubes in high yield via chemical vapor deposition. The developed route provides a high degree of control of various aspects, such as the tube length, yield, quality and the alignment of the tubes. The as-grown CNT are characterized with different techniques; scanning electron microscopy, atomic force microscopy, Raman spectroscopy and transmission electron microscopy.