Single-walled carbon nanotubes (SWCNTs) are considered as a promising material for nanoelectronics because of their excellent electronic and physical properties. Their electronic properties strongly depend on their diameter and chiral angle, which are identified by the chiral indices (n,m). Depending on the chirality, SWCNTs are divided into metallic and semiconductor SWCNTs. We used dielectrophoresis in order to deposit semiconductor SWCNTs in between two metallic electrodes in order to construct a field effect transistor (FET). The electrical properties of such FET are studied by means of I-V measurements and electrostatic force microscopy. Multiple drawbacks appear for such devices and are related to the contact resistance between the SWCNTs and the metallic electrodes as well as between different SWCNTs. To overcome these difficulties we have begun a new line in our research, to horizontally grow CNT in a manner which allows us to modify the electrical properties of SWCNTs through the synthesis phase by introducing a kink in the grown SWCNTs. In essence we aim to tailor SWCNT electronic properties via the controlled introduction of molecular junctions. Scanning electron microscopy, Raman spectroscopy and transmission electron microscopy are used to characterize and study the carbon nanotubes after growth.