CARbon nanoTube phOtONic devices on silicon | CARTOON


Funding period:Jan. 1, 2013 to Dec. 31, 2015
Agency: European Union

Description

Primary goal of the proposed research action is the development of a novel strategy for hybridizing silicon based photonic devices, exploiting semiconducting single-walled carbon nanotubes (s-SWNT) as integrated light source, modulator and detector. Photonics in Information and Communication Technologies (ICT) is more and more investigated for a broad application domain.
These applications require efficient optoelectronic devices to emit, modulate and detect light. To facilitate photonic and electronic convergence, the envisioned approach is based on the silicon platform. However, the definition of optoelectronic devices requires several kinds of materials (Si, Ge and III-V) as silicon is an indirect-gap material with poor electro-optic properties.
This project aims at investigating a new and innovative field through the use of SWNT in the near infrared (NIR) wavelength range. The main breakthrough will come from the development of SWNT-based optoelectronic components directly co-integrated within a silicon platform to address the major challenges of photonics. Such integration has never been investigated so far and thanks to a joint experimental and theoretical investigation our major goal is to establish the potential of SWNT technology for nanophotonics applications.

CARbon nanoTube phOtONic devices on silicon | CARTOON


Funding period:Jan. 1, 2013 to Dec. 31, 2015
Agency: European Union

Description

Primary goal of the proposed research action is the development of a novel strategy for hybridizing silicon based photonic devices, exploiting semiconducting single-walled carbon nanotubes (s-SWNT) as integrated light source, modulator and detector. Photonics in Information and Communication Technologies (ICT) is more and more investigated for a broad application domain.
These applications require efficient optoelectronic devices to emit, modulate and detect light. To facilitate photonic and electronic convergence, the envisioned approach is based on the silicon platform. However, the definition of optoelectronic devices requires several kinds of materials (Si, Ge and III-V) as silicon is an indirect-gap material with poor electro-optic properties.
This project aims at investigating a new and innovative field through the use of SWNT in the near infrared (NIR) wavelength range. The main breakthrough will come from the development of SWNT-based optoelectronic components directly co-integrated within a silicon platform to address the major challenges of photonics. Such integration has never been investigated so far and thanks to a joint experimental and theoretical investigation our major goal is to establish the potential of SWNT technology for nanophotonics applications.