Planar atomic and molecular scale devices | PAMS


Funding period:Jan. 1, 2013 to Dec. 31, 2017
Agency: European Union
Further details:http://pams-project.eu/

Description

The PAMS project will explore all scientific and technological aspects of the fabrication of planar atomic and sub-molecular scale electronic devices on surfaces of Si:H, Ge:H, AlN, CaCO3 (calcite) and CaF2 with atomic scale precision and reproducibility.
The sub-nanoscale devices will be made by combining ultraprecise Scanning Tunneling Microscopy (STM) and non-contact‚ÄãAtomic Force Microscopy (NC-AFM) atomic and molecular manipulation, including hydrogen extraction from passivated surfaces, controlled local doping and on-surface chemical synthesis of molecular devices and wires by coupling of precursors. PAMS will develop new solutions to reliably address sub-nanometer scale devices from the human scale by developing a new generation of low-temperature interconnection and manipulation machines comprising four STM/NC-AFM heads with sub-angstrem precision, allowing for contacting nanopads connected to dangling bond nanowires, doped silicon nanowires or molecular nanowires.

Planar atomic and molecular scale devices | PAMS


Funding period:Jan. 1, 2013 to Dec. 31, 2017
Agency: European Union
Further details:http://pams-project.eu/

Description

The PAMS project will explore all scientific and technological aspects of the fabrication of planar atomic and sub-molecular scale electronic devices on surfaces of Si:H, Ge:H, AlN, CaCO3 (calcite) and CaF2 with atomic scale precision and reproducibility.
The sub-nanoscale devices will be made by combining ultraprecise Scanning Tunneling Microscopy (STM) and non-contact‚ÄãAtomic Force Microscopy (NC-AFM) atomic and molecular manipulation, including hydrogen extraction from passivated surfaces, controlled local doping and on-surface chemical synthesis of molecular devices and wires by coupling of precursors. PAMS will develop new solutions to reliably address sub-nanometer scale devices from the human scale by developing a new generation of low-temperature interconnection and manipulation machines comprising four STM/NC-AFM heads with sub-angstrem precision, allowing for contacting nanopads connected to dangling bond nanowires, doped silicon nanowires or molecular nanowires.