Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer-scale, which is compatible with the Si-based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer-scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer-scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch-to-batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO2. The electronic transport and transparent conductance of the wafer-scale graphene are compared with high-quality single crystal. The progress and proof-of-the-concept are briefly recalled in graphene-based electronics such as transistors, sensors, integrated circuits, and spin transport valves. Eventually, the readers are provoked with the current challenges as well as the future opportunities.​