Organic Zener Diodes: Tunneling across the gap in organic semiconductor materials
Nano Letters 10, 4929 (2010).
H. Kleemann, R. Gutierrez, F. Lindner, S. Avdoshenko, P. D. Manrique, B. Lüssem, G. Cuniberti, and K. Leo.
https://doi.org/10.1021/nl102916n

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to +15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital\u2212lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

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Organic Zener Diodes: Tunneling across the gap in organic semiconductor materials
Nano Letters 10, 4929 (2010).
H. Kleemann, R. Gutierrez, F. Lindner, S. Avdoshenko, P. D. Manrique, B. Lüssem, G. Cuniberti, and K. Leo.
https://doi.org/10.1021/nl102916n

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to +15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the highest occupied molecular orbital\u2212lowest unoccupied molecular orbital gap of neighboring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

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Involved Scientists