Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector
Phys. Chem. Chem. Phys. 16, 22687 (2014).
M. Shaygan, K. Davami, N. Kheirabi, C. K. Baek, G. Cuniberti, M. Meyyappan, and J. S. Lee.
Journal DOI: https://doi.org/10.1039/c4cp03322a

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (2.5 - 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.

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©10.1039/c4cp03322a
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Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector
Phys. Chem. Chem. Phys. 16, 22687 (2014).
M. Shaygan, K. Davami, N. Kheirabi, C. K. Baek, G. Cuniberti, M. Meyyappan, and J. S. Lee.
Journal DOI: https://doi.org/10.1039/c4cp03322a

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photoconductive gain (2.5 - 10(4)%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.

Cover
©10.1039/c4cp03322a
Share


Involved Scientists