Charge transport in nanowire-based Schottky-barrier field-effect transistors in the material system Ni2Si/Si is examined by multi-scale simulations. The field effect is described by calculations based on the finite element method and the resulting currents are calculated with a quantum mechanical transport model. The requirements for the accuracy of the input parameters are determined and predictions about optimum material and device parameters are made.
Charge transport in nanowire-based Schottky-barrier field-effect transistors in the material system Ni2Si/Si is examined by multi-scale simulations. The field effect is described by calculations based on the finite element method and the resulting currents are calculated with a quantum mechanical transport model. The requirements for the accuracy of the input parameters are determined and predictions about optimum material and device parameters are made.
