Silicon nitride thin films are using with a growing scale in technology. Its excellent properties have wide applications in electronics, optics and MEMS devises. We have developed the computer model of PECVD processes for modeling SiN xHy thin films deposition. We have investigated SIH4-NH3-N2 chemical system with different parameters of the process: mixture ratio, power of ICP plasma, gas velocity etc. The results of modeling show change of the components concentration in SiN xHy film when the parameters change. The concentrations determine main physical properties of the film. The model can be used for development new deposition processes of silicon nitride thin films.
Silicon nitride thin films are using with a growing scale in technology. Its excellent properties have wide applications in electronics, optics and MEMS devises. We have developed the computer model of PECVD processes for modeling SiN xHy thin films deposition. We have investigated SIH4-NH3-N2 chemical system with different parameters of the process: mixture ratio, power of ICP plasma, gas velocity etc. The results of modeling show change of the components concentration in SiN xHy film when the parameters change. The concentrations determine main physical properties of the film. The model can be used for development new deposition processes of silicon nitride thin films.
