Graphene has been attracting many intentions for a post-Si material due to its high mobility. Since its gapless band structure keeps from turning-off the devices in traditional way, until recently, applications for the graphene transistors are limited to analog amplifiers which does not have to be turned off during the operation. Last year new device structures have been proposed to solve the issue: graphene barristor [1] and graphene tunneling transistor [2]. Both structures have hetero junction between graphene and semiconductor or insulator. In this talk, reviewed will be the research on graphene transistors towards RF (Radio Frequency) applications and also the research on graphene barristor or tunneling transistor towards logic applications.
[1] H. Yang, J. Heo, S. Science, 336, 1140-1143 (2012)
[2] L. Britnell, R. V. Gorbachev, R. Jalil, et al., Science, 335, 947-950 (2012)
Graphene has been attracting many intentions for a post-Si material due to its high mobility. Since its gapless band structure keeps from turning-off the devices in traditional way, until recently, applications for the graphene transistors are limited to analog amplifiers which does not have to be turned off during the operation. Last year new device structures have been proposed to solve the issue: graphene barristor [1] and graphene tunneling transistor [2]. Both structures have hetero junction between graphene and semiconductor or insulator. In this talk, reviewed will be the research on graphene transistors towards RF (Radio Frequency) applications and also the research on graphene barristor or tunneling transistor towards logic applications.
[1] H. Yang, J. Heo, S. Science, 336, 1140-1143 (2012)
[2] L. Britnell, R. V. Gorbachev, R. Jalil, et al., Science, 335, 947-950 (2012)
