| Manufacturer: | Raith |
| Model: | eLine Plus |
| Facility: | Chair of Materials Science and Nanotechnology | Partner: | TU Dresden |
| Location: | MBZ 005 |
Ultra High Resolution Electron Beam Lithography
Beam energy 20 eV – 30 keV
Beam current 5 pA – 20 nA
Writing speed 0.125 Hz – 20 MHz pixel frequency
Stage travel range / sample size 100 mm / ≤ 4 inch wafer
Beam size ≤ 1.6 nm @ 20 keV
Beam current density ≥ 7500 A / cm2
Beam current drift ≤ 0,5% / 8 hours
Minimum grating periodicity ≤ 40 nm
Minimum linewidth ≤ 8 nm
Stitching accuracy ≤ 40 nm (mean+3σ)
Overlay accuracy ≤ 40 nm (mean+3σ)
| Manufacturer: | Raith |
| Model: | eLine Plus |
| Facility: | Chair of Materials Science and Nanotechnology | Partner: | TU Dresden |
| Location: | MBZ 005 |
Ultra High Resolution Electron Beam Lithography
Beam energy 20 eV – 30 keV
Beam current 5 pA – 20 nA
Writing speed 0.125 Hz – 20 MHz pixel frequency
Stage travel range / sample size 100 mm / ≤ 4 inch wafer
Beam size ≤ 1.6 nm @ 20 keV
Beam current density ≥ 7500 A / cm2
Beam current drift ≤ 0,5% / 8 hours
Minimum grating periodicity ≤ 40 nm
Minimum linewidth ≤ 8 nm
Stitching accuracy ≤ 40 nm (mean+3σ)
Overlay accuracy ≤ 40 nm (mean+3σ)
