TiS3 Transistors with Tailored Morphology and Electrical Properties
Advanced Materials 27, 2595 (2015).
J. O. Island, M. Barawi, R. Biele, A. Almazán, J. M. Clamagirand, J. R. Ares, C. Sánchez, H. S. van der Zant, J. V. Álvarez, R. D'Agosta, I. J. Ferrer, and A. Castellanos-Gomez.
Journal DOI: https://doi.org/10.1002/adma.201405632

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

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©https://doi.org/10.1002/adma.201405632
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TiS3 Transistors with Tailored Morphology and Electrical Properties
Advanced Materials 27, 2595 (2015).
J. O. Island, M. Barawi, R. Biele, A. Almazán, J. M. Clamagirand, J. R. Ares, C. Sánchez, H. S. van der Zant, J. V. Álvarez, R. D'Agosta, I. J. Ferrer, and A. Castellanos-Gomez.
Journal DOI: https://doi.org/10.1002/adma.201405632

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n-type doping.

Cover
©https://doi.org/10.1002/adma.201405632
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Involved Scientists