Electronic Bandgap and Exciton Binding Energy of Layered Semiconductor TiS3
Advanced Electronic Materials 1, 1500126 (2015).
A. J. Molina-Mendoza, M. Barawi, R. Biele, E. Flores, J. R. Ares, C. Sánchez, G. Rubio-Bollinger, N. Agraït, R. D'Agosta, I. J. Ferrer, and A. Castellanos-Gomez
https://doi.org/10.1002/aelm.201500126